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  features e g n-channel c     
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                !   "#$%&  '       (    )  '    #$%&*  +,-+.    * * ') *      (    # ) & *!/01       ) (  )    '#$%&     )' ( +,-+.        #$%&2 34   ')        5 ((  6.*789!81 to-247ac   
   

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 2 www.irf.com   
  
  
  
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 www.irf.com 3      :;1<#  =    !"     #" 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 0.1 1 10 100 0 5 10 15 20 25 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w
60% of rated voltage i ideal diodes square wave: 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o downloaded from: http:///
 4 www.irf.com   $%&&'##  "&&(    
    '&) ( &   $%&& & -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10.5 c i = a 21 c i = a 42 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
 www.irf.com 5 0 10 20 30 40 50 3.0 3.5 4.0 4.5 5.0 r , gate resistance (ohm) total switching losses (mj) g v = 800v v = 15v t = 25 c i = 21a cc ge j c       '&)    *") *  '&)    +,")* -    +,") ( & 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 21a cc c 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 4  5-4 7 ? ) -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 800v g ge cc i = a 42 c i = a 21 c i = a 10.5 c  ? downloaded from: http:///
 6 www.irf.com 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area     !##+!
  $%&&,).,    +,")   '& 1 10 100 024681 0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j 0 10 20 30 40 50 0 4 8 12 16 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 800v v = 15v g j cc ge   ? downloaded from: http:///
 www.irf.com 7    --   / 
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/  / 0 100 200 300 400 500 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 10 100 1000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 0 40 80 120 160 200 100 1000 f di /dt - (a/s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j downloaded from: http:///
 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce   & 1  4  #  +  + 

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   t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff =   & ?' 1   38@.   +  
   vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt   & ?' 1   38@ .  +  
     & ?' 1   38@ .  +     >  #      downloaded from: http:///
 www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit       
  figure 18e. macro waveforms for figure 18a's test circuit downloaded from: http:///
 10 www.irf.com notes:  repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20)  v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 ? (figure 19)  pulse width 80s; duty factor 0.1%.  pulse width 5.0s, single shot. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/06 
  dimensions are shown in millimeters (inches) to-247ac package is not recommended for surface mount application. downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///


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